| PART |
Description |
Maker |
| 2N7002WG-AL3-R 2N7002WL-AL3-R |
300m Amps, 60 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| NTMD3P03R2-D NTMD3P03R2 NTMD3P03R2/D |
Power MOSFET -3.05 Amps-30 Volts
Power MOSFET -3.05 Amps, -30 Volts Dual P?Channel SO(-3.05 A, -30 V，双P通道,SO-8封装的功率MOSFET)
Power MOSFET -3.05 Amps, -30 Volts Dual P-Channel SO-8
|
ON Semiconductor
|
| NTTD2P02R2-D NTTD2P02R2/D |
Power MOSFET -2.4 Amps-20 Volts
Power MOSFET -2.4 Amps, -20 Volts Dual P-Channel Micro8
|
ON Semiconductor
|
| NTD32N06-1 NTD32N06-1G NTD32N06T4G NTD32N06 NTD32N |
Power MOSFET 32 Amps, 60 Volts
32 Amps, 60 Volts, N−Channel DPAK
|
ONSEMI[ON Semiconductor]
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| MMDF2N02E-D |
Power MOSFET 2 Amps, 25 Volts N-Channel SO-8, Dual
|
ON Semiconductor
|
| MMDF2P03HD MMDF2P03HDR2 |
Power MOSFET 2 Amps, 30 Volts P?Channel SO?, Dual
|
ON Semiconductor
|
| MMDF2C02E-D |
Power MOSFET 2.5 Amps, 25 Volts Complementary SO-8, Dual
|
ON Semiconductor
|
| CSHD6-60C |
SCHOTTKY RECTIFIER DUAL,COMMON CATHODE 6.0 AMPS, 60 VOLTS
|
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
